HOT ELECTRONS IN LAYERED SEMICONDUCTORSHESS K; HOLONYAK N JR.1980; PHYS. TODAY; ISSN 0031-9228; USA; DA. 1980; VOL. 33; NO 10; PP. 40-47; 6 P.; BIBL. 17 REF.Article

EFFECT OF CRYSTAL COMPOSITION ON THE OPTIMIZATION OF RADIATIVE RECOMBINATION IN N-FREE AND N-DOPED IN_1-XGA_XP LIGHT-EMITTING DIODES.NELSON RJ; HOLONYAK N JR.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1704-1707; BIBL. 29 REF.Article

HOT-ELECTRON AND PHONON EFFECTS IN LAYERED SEMICONDUCTOR STRUCTURES AND HETEROSTRUCTURESHESS K; HOLONYAK N JR.1981; COMMENTS SOLID STATE PHYS.; ISSN 0010-2717; USA; DA. 1981; VOL. 10; NO 3; PP. 67-84; BIBL. 34 REF.Article

NITROGEN TRAP BOUND STATES IN IN_1-XGA_XP.NELSON RJ; HOLONYAK N JR.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 6; PP. 549-551; BIBL. 14 REF.Article

EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND STRUCTURE OF N-FREE AND N-DOPED IN_1-XGA_XP.NELSON RJ; HOLONYAK N JR.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 6; PP. 629-637; BIBL. 39 REF.Article

MELT REMOVAL AND PLANAR GROWTH OF IN_1-XGA_XP_1-ZAS_Z HETEROJUNCTIONS.COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 7; PP. 363-365; BIBL. 15 REF.Article

COMPOUND SEMICONDUCTORSHOLONYAK N JR; STILLMAN GE; WOLFE CM et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 12; PP. 487C-499C; BIBL. 128 REF.Article

LIMITATIONS OF THE DIRECT-INDIRECT TRANSITION ON IN₁-X GAXP₁-ZAS_Z IN_1-XGA_XP_1-ZAS_Z HETEROJONCTIONS.HOLONYAK N JR; CHIN R; COLEMAN JJ et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 2; PP. 635-638; BIBL. 21 REF.Article

TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT FOR COUPLED MULTIPLE QUANTUM-WELL IN_1-XGA_XP_1-2AS₂-INP HETEROSTRUCTURE LASER DIODESRESEK EA; HOLONYAK N JR; FULLER BK et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2402-2405; BIBL. 38 REF.Article

BEVEL CROSS SECTIONING OF ULTRA-THIN (100 A) III-V SEMI CONDUCTOR LAYERSHOLONYAK N; VOJAK BA; KOLBAS RM et al.1979; SOLID STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 4; PP. 431-433; BIBL. 8 REF.Article

FREE-EXCITON TRANSITIONS IN THE OPTICAL ABSORPTION SPECTRA OF GAAS_1-XP_X.NELSON RJ; HOLONYAK N JR; GROVES WO et al.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 12; PP. 5415-5419; BIBL. 28 REF.Article

PLANAR ZN DIFFUSION IN INP.REZEK EA; WRIGHT PD; HOLONYAK N JR et al.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 325-329; BIBL. 15 REF.Article

BANDFILLING IN LIQUID PHASE EPITAXIAL INP-IN_1-XGA_XP_1-ZAS_Z-INP QUANTUM-WELL HETEROSTRUCTURE LASERSREZEK EA; VOJAK BA; HOLONYAK N JR et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 11; PP. 5398-5403; BIBL. 14 REF.Article

LATTICE MATCHING AND DISLOCATIONS IN LPEIN_1-XGA_XP_1-ZAS_Z-INP HETEROJUNCTIONS.WRIGHT PD; REZEK EA; HOLONYAK N JR et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 41; NO 2; PP. 254-261; BIBL. 29 REF.Article

COMPOSITIONAL INHOMOGENEITY OF LIQUID PHASE EPITAXIAL INGAPAS LAYERS OBSERVED DIRECTLY IN PHOTOLUMINESCENCEREZEK EA; VOJAK BA; CHIN R et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 744-746; BIBL. 16 REF.Article

LOW-THRESHOLD LPE IN_1-X'GA_X'P_1-Z'/IN_1-XGA_XP_1-ZAS_Z/IN_1-X' GA_X'P_1-Z'AS_Z' YELLOW DOUBLE-HETEROJUNCTION LASER DIODES (J<10⁴ A/CM², LAMBDA EQUIV. A 5850 A, 77^OK).HITCHENS WR; HOLONYAK N JR; WRIGHT PD et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 245-247; BIBL. 14 REF.Article

ZN DIFFUSION AND DISORDERING OF AN ALAS-GAAS SUPERLATTICE ALONG ITS LAYERSKIRCHOEFER SW; HOLONYAK N JR; COLEMAN JJ et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 766-768; BIBL. 10 REF.Article

QUANTUM-WELL HETEROSTRUCTURE LASERSHOLONYAK N JR; KOLBAS RM; DUPUIS RD et al.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 2; PP. 170-186; BIBL. 56 REF.Article

DETERMINATION OF THE INDIRECT BAND EDGE OF GAAS BY QUANTUM WELL BANDFILLING (L₂ EQUIV. A 100 A)DUPUIS RD; DAPKUS PD; KOLBAS RM et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 5; PP. 531-533; BIBL. 15 REF.Article

RECOMBINAISON PROCESSES INVOLVING ZN AND N IN GAAS_1-XP_X.CAMPBELL JC; HOLONYAK N JR; LEE MH et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 1755-1757; BIBL. 10 REF.Article

STIMULATED EMISSION IN A DEGENERATELY DOPED GAAS QUANTUM WELLHOLONYAK N; VOJAK BA; MORKOC H et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 658-660; BIBL. 9 REF.Article

CONFINED-CARRIER LUMINESCENCE OF A THIN IN_1-XGA_XP_1-ZAS_Z WELL (X EQUIV. A 0.13,Z EQUIV. A 0.29, EQUIV. A 400 A) IN AN INP P-N JUNCTION.REZEK EA; SHICHIJO H; VOJAK BA et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 8; PP. 534-536; BIBL. 11 REF.Article

TUNNEL INJECTION INTO THE CONFINED-PARTICLE STATES OF AN IN_1-XGA_XP_1-XAS₂ WELL IN INPA.REZEK EA; HOLONYAK N JR; VOJAK BA et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 703-705; BIBL. 10 REF.Article

YELLOW IN_1-XGA_XP_1-ZAS_Z DOUBLE-HETEROJUNCTION LASERS.COLEMAN JJ; HOLONYAK N JR; LUDOWISE MJ et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 2015-2019; BIBL. 20 REF.Article

PHOTOSENSITIVE IMPURITY-ASSISTED TUNNELING IN AU-GE-DOPED GA_1-XAL_XAS P-N DIODESANDREWS AM; KORB HW; HOLONYAK N JR et al.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 5; NO 10; PP. 4191-4194; BIBL. 8 REF.Serial Issue